References | - Wager J. F. 2003 Transparent electronics, (May 2003) 1245-1246.
- Minami T., 2005 Transparent conducting oxide semiconductors for transparent electrodes, Semicond. Sci. Technol., (Mar. 2005) 535-544.
- Hoffman R. L., Norris B. H. and Wager J. F. 2003 ZnO-based transparent thin-film transistors, Appl. Phys. Lett. (Feb. 2003) 733-735.
- Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., and Hosono H., 2004 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature, (Nov. 2004) 488-492.
- Fortunato M. C., Barquinha P. M. C., Pimentel A. C. M. B. G., Goncalves A. M. F., Marques A. J. S., Pereira L. M. N., 2005 Fully transparent ZnO thin-film transistor produced at room temperature,” Adv. Mater., (Mar. 2005) 590–594.
- Park S. K., Hwang C., Ryu M., Yang S., Byun C., Shin. J., 2005 Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel, Adv. Mater., (Mar. 2005) 590–594.
- Lopes M. E., Gomes H. L., Medeiros M. C. R., Barquinha P., Pereira L., Fortunato E., 2009 Gate-bias stress in amorphous oxide semiconductors thin-film transistors, Appl. Phys. Lett., (Aug. 2009) 063502-1-063502-3.
- Jeong J. K., Yang H. W., Jeong J. H., Mo Y.G., and Kim H. D., 2008 Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors, Appl. Phys. Lett., (Sep. 2008) 123508-1–123508-3.
- Oh H., Yoon S. M., Ryu M. K., Hwang C. S., Yang S., and Park H. K., 2010 Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor, Appl. Phys. Lett., (Nov. 2010) 183502-1–183502-3.
- Hosono H. 2006 Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application, J. Non-Cryst. Solids, (Apr. 2006) 851–858.
- Ahn C. H., Kong B. H., Kim H., and Cho H. K., 2011 Improved electrical stability in the Al doped ZnO thin-film-transistors grown by atomic layer deposition, J. Electrochem. Soc., H170–H173.
- Kim C. J., Kim S., Lee H., Park J. S., Kim S., Park J., 2009 Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors, Appl. Phys. Lett., (Dec. 2009) 252103-1–252103-3.
- Chong E., Jo K. C., and Lee S. Y., 2010 High stability of amorphous hafnium-indium-zinc-oxide thin film transistor, Appl. Phys. Lett., (Apr. 2010) 152102-1–152102-3.
- Kim J. I., Ji K. H., Jung H. Y., Park S. Y., Choi R., Jang M., 2011 Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface, Appl. Phys. Lett., (Sep. 2011) 122102-1–122102-3.
- Chong E. and Lee Y., 2012 Influence of a highly doped buried layer for HfInZnO thin-film transistors, Semi Cond. Sci. Technol., (Jan. 2012) 012001-1-012001-4.
- Park J. C., Kim S., Kim C., Song I., Park Y. 2010 Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers, Adv. Mater., (Dec. 2010) 5512–5516.
- Jeon S., Ahn S., Song I., Kim C. J., Chung U., Lee E., 2012 Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays, Nature Mater., 301-305.
|
---|